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| SEMICONDUCTOR HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Channel IGBTs Packaging JEDEC TO-220AB EMITTER COLLECTOR GATE January 1997 Features * 14A, 600V at TC = 25oC * * * * 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150oC Short Circuit Rating Low Conduction Loss COLLECTOR (FLANGE) Description The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY PART NUMBER HGTD7N60C3 HGTD7N60C3S HGTP7N60C3 PACKAGE TO-251AA TO-252AA TO-220AB BRAND G7N60C G7N60C G7N60C3 JEDEC TO-251AA EMITTER COLLECTOR (FLANGE) COLLECTOR GATE JEDEC TO-252AA GATE EMITTER COLLECTOR (FLANGE) Terminal Diagram N-CHANNEL ENHANCEMENT MODE C NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, i.e. HGTD7N60C3S9A. Formerly Developmental Type TA49115. G E Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified UNITS V A A A V V W W/oC mJ oC oC s s HGTD7N60C3, HGTD7N60C3S HGTP7N60C3 Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 14 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 7 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM 56 Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES 20 Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM 30 Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 40A at 480V Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 60 Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.48 Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -40 to 150 Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 1 Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 8 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RGE = 50. CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures. Copyright (c) Harris Corporation 1997 File Number 4141.2 3-16 HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 Electrical Specifications PARAMETER Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 3mA, VGE = 0V VCE = BVCES VCE = BVCES Collector-Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15V IC = 250A, VCE = VGE VGE = 25V TJ = 150oC RG = 50 VGE = 15V L = 1mH VCE(PK) = 480V VCE(PK) = 600V TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC MIN 600 16 3.0 TYP 30 1.6 1.9 5.0 MAX 250 2.0 2.0 2.4 6.0 250 UNITS V V A mA V V V Gate-Emitter Threshold Voltage VGE(TH) IGES SSOA Gate-Emitter Leakage Current Switching SOA 40 6 - nA A A Gate-Emitter Plateau Voltage On-State Gate Charge VGEP QG(ON) IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20V - 8 23 30 8.5 11.5 350 140 165 600 - 30 38 400 275 2.1 V nC nC ns ns ns ns J J oC/W Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Thermal Resistance NOTE: tD(ON)I tRI tD(OFF)I tFI EON EOFF RJC TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG= 50 L = 1.0mH 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 3-17 HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 Typical Performance Curves ICE, COLLECTOR-EMITTER CURRENT (A) DUTY CYCLE <0.5%, VCE = 10V 35 PULSE DURATION = 250s 30 25 20 15 TC = -40oC 10 5 0 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 TC = 150oC TC = 25oC ICE, COLLECTOR-EMITTER CURRENT (A) 40 PULSE DURATION = 250s, DUTY CYCLE <0.5%, TC = 25oC 40 35 30 25 20 15 8.5V 10 5 0 0 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 8.0V 7.5V 7.0V 10 10.0V VGE = 15.0V 12.0V 9.0V FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) 40 PULSE DURATION = 250s 35 DUTY CYCLE <0.5%, VGE = 10V 30 25 20 15 10 5 0 0 2 3 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 1 5 TC = 150oC TC = 25oC TC = -40oC 40 35 30 25 20 15 10 5 0 0 PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 15V TC = -40oC TC = 25oC TC = 150oC 1 2 3 4 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3. COLLECTOR-EMITTER ON - STATE VOLTAGE FIGURE 4. COLLECTOR-EMITTER ON - STATE VOLTAGE tSC , SHORT CIRCUIT WITHSTAND TIME (S) 12 10 ISC 8 120 9 100 6 6 80 3 4 tSC 2 10 11 12 13 14 VGE , GATE-TO-EMITTER VOLTAGE (V) 60 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) 150 40 15 FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A FUNCTION OF CASE TEMPERATURE FIGURE 6. SHORT CIRCUIT WITHSTAND TIME 3-18 ISC, PEAK SHORT CIRCUIT CURRENT(A) 15 ICE , DC COLLECTOR CURRENT (A) VGE = 15V 12 VCE = 360V, RGE = 50, TJ = 125oC 140 HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 Typical Performance Curves 50 tD(ON)I , TURN-ON DELAY TIME (ns) 40 30 (Continued) 500 tD(OFF)I , TURN-OFF DELAY TIME (ns) 450 400 350 VGE = 10V OR 15V 300 TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V 20 VGE = 10V VGE = 15V 10 250 5 2 5 8 11 14 17 20 ICE , COLLECTOR-EMITTER CURRENT (A) 200 2 8 11 14 17 5 ICE , COLLECTOR-EMITTER CURRENT (A) 20 FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 200 tRI , TURN-ON RISE TIME (ns) TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V VGE = 10V tFI , FALL TIME (ns) 300 250 TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V 100 200 VGE = 10V or 15V 150 VGE = 15V 10 5 2 5 8 11 14 17 ICE , COLLECTOR-EMITTER CURRENT (A) 20 100 2 5 8 11 14 17 ICE , COLLECTOR-EMITTER CURRENT (A) 20 FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 2000 EON , TURN-ON ENERGY LOSS (J) 1000 VGE = 10V 500 VGE = 15V EOFF , TURN-OFF ENERGY LOSS (J) TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V 3000 TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V 1000 500 VGE = 10V or 15V 100 40 2 5 8 11 14 17 20 ICE , COLLECTOR-EMITTER CURRENT (A) 100 2 17 8 11 5 14 ICE , COLLECTOR-EMITTER CURRENT (A) 20 FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 3-19 HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 Typical Performance Curves 200 fMAX , OPERATING FREQUENCY (kHz) 100 (Continued) 50 ICE, COLLECTOR-EMITTER CURRENT (A) TJ = 150oC, TC = 75oC RG = 50, L = 1mH TJ = 150oC, VGE = 15V, RG = 50, L = 1mH 40 VGE = 10V fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) VGE = 15V 30 10 20 PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 2.1oC/W 1 2 10 ICE, COLLECTOR-EMITTER CURRENT (A) 20 30 10 0 0 100 200 300 400 500 600 VCE(PK), COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF COLLECTOR-EMITTER CURRENT FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA 1200 1000 C, CAPACITANCE (pF) 800 600 400 200 CRES 0 0 5 10 15 CIES VCE , COLLECTOR - EMITTER VOLTAGE (V) IG REF = 1.044mA, RL = 50, TC = 25oC 600 500 400 300 200 VCE = 400V 100 0 0 5 10 15 20 25 QG , GATE CHARGE (nC) VCE = 200V 2.5 0 30 VCE = 600V 15 12.5 10 7.5 5 VGE, GATE-EMITTER VOLTAGE (V) FREQUENCY = 1MHz COES 20 25 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE FIGURE 16. GATE CHARGE WAVEFORMS ZJC , NORMALIZED THERMAL RESPONSE 100 0.5 0.2 PD 0.1 10-1 0.05 0.02 0.01 SINGLE PULSE 10-2 10-5 10-4 t2 t1 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-2 10-1 10-3 t1 , RECTANGULAR PULSE DURATION (s) 100 101 FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE 3-20 HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 Test Circuit and Waveform L = 1mH RHRD660 VGE RG = 50 + 90% 10% EOFF VCE VDD = 480V ICE 90% 10% tD(OFF)I tFI tRI tD(ON)I EON - FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ECCOSORBDTM is a Trademark of Emerson and Cumming, Inc. Operating Frequency Information Operating Frequency Information for a Typical Device Figure 13 is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on- state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJMAX TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 19. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0). 3-21 |
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